Investigating the effect of Pb-Al doped CdS and CdS: Pb/CdS: Al homojunction on structure and gas sensing properties synthesis by chemical bath deposition method
DOI:
https://doi.org/10.17977/um067v6i42026p3Keywords:
Gas Sensor, Cadmium Sulphide, Chemical Bath Deposition, Nitrogen DioxideAbstract
In this study, thin film of undoped CdS is prepared, in addition to other films doped with Pb and Al at different concentration between 0.002M to 0.006M and CdS: Pb/CdS: Al homojunction, these films were deposited using the chemical bath deposition method on glass substrate at deposition temperature of 70℃. To analysis the structural and morphological characteristcs of (Pb, Al)-doped CdS thin films and CdS: Pb/ CdS: Al homojunction films were utilizing “x-ray diffraction, field emission scanning electron microscopy, as well as energy dispersive X-ray”. The pattern of XRD showed that the pure CdS thin film had mix phase of hexagonal and cubic, which was turned to cubic structure by doping of Pb and Al. FE-SEM images reveal that the CdS thin film without doping a uniform morphology of spherical-like morphology with different size between 35.85nm to 64.18nm. The EDX analysis showed the existence of Cd, S, Pb and Al as primary elements in those films. The electrical resistance of the pure CdS thin film is rises when reacting with reducing gas, and reduces in the presence of an oxidizing gas, which demonstrates the behavior of p-type semiconductors. The resistances of Pb-doped CdS thin films are decreases upon exposure to a reducing gas, and increases in the presence of an oxidizing gases, demonstrating a n-type semiconductor behavior. Al-doped CdS thin film not causes an inversion the p-type behavior of the CdS semiconductor. Pb-doped CdS thin film at concentration of 0.004M show the highest sensitivity for both Hydrogen sulfide and Nitrogen dioxide gases 175.2% and 48.31% respectively at operating temperature of 300℃. Al-doped CdS thin film at concentration of 0.004M show the highest sensitivity for both Hydrogen sulfide and Nitrogen dioxide gases were 54.15% and 35.2% respectively at operating temperature of 200℃.
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